Variation of the yield of electron emission from a silicon single crystal with the diffraction condition of exciting x-rays
1975; Elsevier BV; Volume: 50; Issue: 6 Linguagem: Inglês
10.1016/0375-9601(75)90123-1
ISSN1873-2429
AutoresShu Kikuta, Toshio Takahashi, Yutaka Tuzi,
Tópico(s)X-ray Spectroscopy and Fluorescence Analysis
ResumoAn anomalous variation of the yield of K-, L-photoelectrons and KLL Auger electrons emitted from a surface of a silicon single crystal has been studied under the diffraction condition of exciting X-rays of Cu Kα radiation.
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