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Temperature and Current Dependent Capture of Injected Carriers in InGaN Single-Quantum-Well Light-Emitting Diodes

2002; Wiley; Volume: 192; Issue: 1 Linguagem: Inglês

10.1002/1521-396x(200207)192

1521-396X

A. Hori, D. Yasunaga, Akihiro Satake, K. Fujiwara,

ZnO doping and properties

physica status solidi (a)Volume 192, Issue 1 p. 44-48 Original Paper Temperature and Current Dependent Capture of Injected Carriers in InGaN Single-Quantum-Well Light-Emitting Diodes A. Hori, A. Hori Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this authorD. Yasunaga, D. Yasunaga Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this authorA. Satake, A. Satake Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this authorK. Fujiwara, K. Fujiwara fujiwara@ele.kyutech.ac.jp Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this author A. Hori, A. Hori Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this authorD. Yasunaga, D. Yasunaga Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this authorA. Satake, A. Satake Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this authorK. Fujiwara, K. Fujiwara fujiwara@ele.kyutech.ac.jp Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, JapanSearch for more papers by this author First published: 25 June 2002 https://doi.org/10.1002/1521-396X(200207)192:1 3.0.CO;2-4Citations: 8AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Temperature and injection current dependence of electroluminescence (EL) spectral intensity of the super-bright InGaN single-quantum-well (SQW) light-emitting diodes (LEDs) has been carefully investigated over a wide temperature range (T = 15–300 K) and as a function of injection current level (0.1–10 mA). It is found that, when T is slightly decreased from 300 to 140 K, the EL intensity efficiently increases due to reduced non-radiative recombination processes. However, with further decrease of T below 100 K, it drastically decreases due to the reduced carrier capturing by the localized radiative recombination centers and shows a clear trend of saturation with current, accompanying decreases of the EL differential efficiency. These results are analyzed based on a rate equation model, assuming a finite number of radiative recombination centers. Citing Literature Volume192, Issue1July 2002Pages 44-48 RelatedInformation