Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure
1997; American Institute of Physics; Volume: 71; Issue: 10 Linguagem: Inglês
10.1063/1.119898
ISSN1520-8842
AutoresW. K. Chen, Ran Cheng, Jehn Ou,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoWe have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).
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