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The inhibition mechanism in polarization bistable semiconductor lasers

1987; IEEE Photonics Society; Volume: 23; Issue: 6 Linguagem: Inglês

10.1109/jqe.1987.1073458

1558-1713

Guy Ropars, A. Le Floch, G. Jézéquel, R. Le Naour, Ying Chen, Jia-Ming Liu,

Nonlinear Dynamics and Pattern Formation

The polarization bistability between TE 00 and TM 00 eigenstates in InGaAsP/InP lasers is shown to be due to the mode inhibition mechanism. A theoretical analysis shows that the switching is governed by two current-dependent competing terms. One term represents the self-stabilization for the existing lasing mode to resist the onset of a new mode. The other term is the gain recovering term of the nonlasing mode. The major contribution to the latter is the relative current dependence of the TE and TM gains. By making proper assumptions for the device parameters based on experimental data, the observed hysteresis loops have been successfully modeled. The conditions for the existence of polarization bistability are discussed.