Lift-off process for nanoimprint lithography
2003; Elsevier BV; Volume: 67-68; Linguagem: Inglês
10.1016/s0167-9317(03)00072-8
ISSN1873-5568
AutoresPatrick Carlberg, Mariusz Graczyk, E.-L. Sarwe, Ivan Maximov, M. Beck, Lars Montelius,
Tópico(s)Force Microscopy Techniques and Applications
ResumoWe report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
Referência(s)