Measurement of mobility profiles in GaAs at room temperature by the Corbino effect
1978; Elsevier BV; Volume: 21; Issue: 6 Linguagem: Inglês
10.1016/0038-1101(78)90303-9
ISSN1879-2405
Autores Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoA method for obtaining profiles of the carrier mobility in GaAs films utilizing the Corbino effect is introduced. This approach is compared with the conventional methods to measure profiles of shallow density and carrier mobility. The Corbino diode permits applying both methods to the same structure. It will be shown that conventional C-V-measurements on n-GaAs at room temperature yield results for the shallow density, which differ numerically from the carrier density.
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