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Strain Induced Half-Metal to Semiconductor Transition in GdN

2005; American Physical Society; Volume: 94; Issue: 23 Linguagem: Inglês

10.1103/physrevlett.94.237201

1092-0145

Chun‐Gang Duan, R. F. Sabiryanov, Jianjun Liu, W. N. Mei, P. A. Dowben, J. R. Hardy,

ZnO doping and properties

We have investigated the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in conduction properties associated with the volume increase: first from halfmetallic to semi-metallic, then ultimately to semiconducting. We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel. In addition, we found that the exchange parameters depend strongly on lattice constant, thus the Curie temperature of this system can be enhanced by applying stress or doping impurities.