Surface passivation of InAs(001) with thioacetamide
2005; American Institute of Physics; Volume: 86; Issue: 24 Linguagem: Inglês
10.1063/1.1946182
ISSN1520-8842
AutoresDmitri Y. Petrovykh, J. P. Long, L. J. Whitman,
Tópico(s)Nanowire Synthesis and Applications
ResumoWe describe the passivation of InAs(001) surfaces with thioacetamide (CH3CSNH2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide (NH4)2Sx. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.
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