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Piezoresistivity in GaAs/In x Ga 1- x As/AlAs superlattice structures

2007; Wiley; Volume: 2; Issue: 1 Linguagem: Inglês

10.1002/pssr.200701273

ISSN

1862-6270

Autores

Wendong Zhang, Jie Hu, Chenyang Xue, Binzhen Zhang, Jijun Xiong, Hui Qiao, Junhong Li,

Tópico(s)

Semiconductor Lasers and Optical Devices

Resumo

Abstract We report on a strong piezoresistive effect in GaAs/ In x Ga 1– x As/AlAs superlattice structures fabricated on a GaAs‐base cantilever. The measurements of the piezoresistive properties were performed for tensile strains by static pressure experiments. The maximum gauge factor (GF) for the GaAs/In x Ga 1– x As/AlAs epilayer can be estimated to 200, which is higher than the value of the gauge factor reported for Si transducers. Our results demonstrate a higher potential of GaAs/In x Ga 1– x As/AlAs superlattice structures for the development of piezoresistive sensors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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