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Resistance changes Induced by Electron Spin Resonance and Spin Relaxation in Phosphorus-Doped Silicon

1974; Physical Society of Japan; Volume: 37; Issue: 1 Linguagem: Inglês

10.1143/jpsj.37.130

1347-4073

Seizo Toyotomi,

Silicon and Solar Cell Technologies

Phosphorus-doped silicon in the intermediate concentration range of impurity conduction exhibits a decrease in dc resistance with occurrence of ESR at low temperatures. This phenomenon is caused by the conversion of spin energy absorbed at ESR into the kinetic energy of carriers. The carriers are here mobile electrons which are excited thermally to the delocalized states characterized by the activation energy ε 2 . The experimental characteristics of this phenomenon are elucidated by studying the non-ohmic properties at high electric fields. The rate at which the absorbed spin energy is transferred to the lattice via the electron kinetic energy is determined. The spin relaxation process of this type is shown to become predominant with increasing donor concentration in the semiconductor-metal transition range.