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The detection of heavy ions with PIN diodes

1990; Elsevier BV; Volume: 45; Issue: 1-4 Linguagem: Inglês

10.1016/0168-583x(90)90831-e

1872-9584

S. C. Gujrathi, D.W. Hetherington, P.F. Hinrichsen, M’hamed Bentourkia,

Nuclear Physics and Applications

The pulse height defect (PHD) and the resolution (ΔE) of a low-cost PIN photodiode (Hamamatsu Model S 1223-01) have been studied for 11B (0.2–16.2 MeV), 35Cl (1.0–8.2 MeV) and 81Br (0.5–8.0 MeV) ions, and found comparable to those of ORTEC silicon surface barrier detectors. The major contribution to the difference in performance of the PIN diode may come from the surface dead-layer which was measured to be 90 ± 11 nm. The dependence of diode properties on the bias voltage shows that even at 0 V the relative pulse height is ≥95% of the value of saturation which is attained within 5 V. The relative resolution (ΔE/E) is nearly constant for all bias values up to 30 V (maximum reverse bias). Some preliminary results on the effect of radiation dose on the leakage current are also presented. These results demonstrate that the low-cost PIN diode can be successfully used as a charged-particle detector in applications such as ion beam analysis (RBS, HIRBS, ERD) and space technology.