In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask
1991; Elsevier BV; Volume: 111; Issue: 1-4 Linguagem: Inglês
10.1016/0022-0248(91)91041-8
ISSN1873-5002
AutoresYuji Hiratani, Y. Ohki, Yoshimasa Sugimoto, Kenzo Akita,
Tópico(s)Semiconductor materials and devices
ResumoAbstract Selective-area epitaxy of GaAs was performed by metalorganic molecular beam epitaxy using a GaAs oxide mask. No deposition of polycrystalline GaAs was observed on a GaAs oxide mask after the selective-area epitaxy using a trimethylgallium (TMG) and As 4 as source materials. An observation of the decomposition of TMG indicated that it occurred above 350°C on an oxide-free surface of GaAs, while decomposition did not occur below 550°C on a GaAs oxide surface. This surface-catalyzed decomposition of TMG explains the selectivity of GaAs growth.
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