Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers
2014; American Physical Society; Volume: 112; Issue: 18 Linguagem: Inglês
10.1103/physrevlett.112.187601
ISSN1092-0145
AutoresAbram L. Falk, Paul V. Klimov, Bob B. Buckley, Viktor Ivády, Igor A. Abrikosov, Greg Calusine, William F. Koehl, Ádám Gali, D. D. Awschalom,
Tópico(s)Semiconductor materials and devices
ResumoThe electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.
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