Dimer-vacancy–dimer-vacancy interaction on the Si(001) surface: The nature of the 2× n structure
1995; American Physical Society; Volume: 52; Issue: 12 Linguagem: Inglês
10.1103/physrevb.52.r8650
ISSN1095-3795
AutoresFu-Kwo Men, Arthur R. Smith, Kuo-Jen Chao, Shengbai Zhang, Chih‐Kang Shih,
Tópico(s)Semiconductor materials and interfaces
ResumoAn increase of dimer vacancies on the Si(001)-2\ifmmode\times\else\texttimes\fi{}1 surface after radiation quenching from high temperatures has been observed using STM. After further quenches, vacancies nucleate into chains running perpendicular to the dimer rows. These vacancy chains then connect and develop into vacancy lines (VL's) that extend for many thousands of \AA{}. Each VL consists of mainly two types of dimer vacancies: a divacancy and the combination of a single vacancy and a divacancy separated by an isolated dimer. All the VL's together with the dimer rows form a 2\ifmmode\times\else\texttimes\fi{}n structure with 6\ensuremath{\le}n\ensuremath{\le}12. Calculations using the Stillinger-Weber potential have been performed to examine the ordering mechanism of dimer vacancies.
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