Highly Polarized Electron Source Using InGaAs–GaAs Strained-Layer Superlattice
1994; Institute of Physics; Volume: 33; Issue: 10R Linguagem: Inglês
10.1143/jjap.33.5676
ISSN1347-4065
AutoresT. Omori, Y. Kurihara, Yasunori Takeuchi, M. Yoshioka, Tsutomu Nakanishi, Shoji Okumi, M. Tsubata, M. Tawada, Kazuaki Togawa, Yasunori Tanimoto, Chikako Takahashi, T. Baba, M. Mizuta,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoWe have studied the polarization of photoemission from an In 0.15 Ga 0.85 As–GaAs strained-layer superlattice. The polarization of 82.7±0.3(stat.)±6.1(syst.)% was observed at laser wavelengths from 911 to 916 nm at room temperature. The quantum efficiency at the wavelength of 911 nm was ∼0.015% in the vacuum of ∼6×10 -10 Torr with high cathode voltage of -4 kV.
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