Preparation of heterojunction solar cell
1993; Elsevier BV; Volume: 36; Issue: 9 Linguagem: Inglês
10.1016/0038-1101(93)90175-p
ISSN1879-2405
AutoresS. R. Vishwakarma, Rahmatullah Rahmatullah, Harish Chandra Prasad,
Tópico(s)Semiconductor materials and interfaces
ResumoHeterojunction solar cells of SnO2:P/n-Si (textured), having AM1 efficiency of 11.0% on single silicon crystal, have been fabricated. The phosphorosu doped tin oxide films are deposited by chemical vapour deposition technique on a heated silicon substrate having a resistivity of 0.1 Ω cm. Before the deposition of SnO2:P, the wafers are textured and growth of a SiO2 layer on the Si surface was avoided. The C-V measurement at 1 kHz frequency shows the abrupt nature of the junction with a built-in voltage Vd = 0.62 V. The variation of cell parameters with temperature has also been studied.
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