Interface supersaturation in microchannel epitaxy of InP
1999; Elsevier BV; Volume: 203; Issue: 1-2 Linguagem: Inglês
10.1016/s0022-0248(99)00050-0
ISSN1873-5002
AutoresZheng Yan, Shigeya Naritsuka, Tatau Nishinaga,
Tópico(s)Force Microscopy Techniques and Applications
ResumoBy employing microchannel epitaxy (MCE), it became possible to reduce the dislocation density in liquid phase epitaxy (LPE) of InP so that steps supplied from only one screw dislocation can cover the whole surface of MCE island. This enabled us to measure interstep distance by AFM and to calculate interface supersaturation even in metallic solution with the help of Cabrera and Levine formula by assuming appropriate value of interface free energy. The interface supersaturation was found being ranged from 0.02 to 0.05 upon various experimental conditions. A minimum interface supersaturation was realized when the growth temperature and cooling rate were chosen as 500°C and 0.05°C/min, respectively. The ratio of width to thickness of the grown MCE layer, which is defined as W/T ratio, was found to increase rapidly with the decrease of the interface supersaturation. A W/T ratio as high as 20 was accomplished under the growth condition where minimum interface supersaturation can be realized.
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