Magnetic Oscillations Driven by the Spin Hall Effect in 3-Terminal Magnetic Tunnel Junction Devices
2012; American Physical Society; Volume: 109; Issue: 18 Linguagem: Inglês
10.1103/physrevlett.109.186602
ISSN1092-0145
AutoresLuqiao Liu, Chi‐Feng Pai, Daniel C. Ralph, R. A. Buhrman,
Tópico(s)Quantum-Dot Cellular Automata
ResumoWe show that a direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device, the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.
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