Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts
1998; American Institute of Physics; Volume: 72; Issue: 9 Linguagem: Inglês
10.1063/1.120947
ISSN1520-8842
AutoresC.L. Chua, R. L. Thornton, D.W. Treat, Michael Kneissl, C. Dunnrowicz,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoWe present top-emitting all-epitaxial planar laterally oxidized vertical-cavity surface-emitting lasers employing transparent indium–tin–oxide electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar laterally oxidized structures using metal contacts. The InAlGaAs-based devices operate at a wavelength of 817 nm with a minimum threshold current of 175 μA.
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