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Ba1−xSrxTiO3 thin films by polymeric precursor method

2000; Elsevier BV; Volume: 43; Issue: 5-6 Linguagem: Inglês

10.1016/s0167-577x(99)00268-2

1873-4979

F. M. Pontes, E. Longo, José Hilton Gomes Rangel, Maria Inês Basso Bernardi, E. R. Leite, J. A. Varela,

Microwave Dielectric Ceramics Synthesis

Stoichiometric Ba1−xSrxTiO3 (BST; x=0.4) thin films were prepared by the polymeric precursor method. High quality polycrystalline films of BST with low roughness (≈3 nm) were obtained from a Pt/Ti/SiO2/Si substrate deposited by spin-coating technique. Microstructure and morphological evaluation were done using grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Grazing incident angle XRD characterization of these films showed that BST phase crystallizes at 600°C from an inorganic amorphous matrix. No intermediate crystalline phase was identified. A linear relationship between roughness and grain size was observed.