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Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes

2001; American Physical Society; Volume: 87; Issue: 25 Linguagem: Inglês

10.1103/physrevlett.87.256805

1092-0145

Richard Martel, Vincent Derycke, C. Lavoie, Joerg Appenzeller, K. Chan, J. Tersoff, Phaedon Avouris,

Force Microscopy Techniques and Applications

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both $p$- and $n$-type carriers---the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.