Properties of SiO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing
2004; Elsevier BV; Volume: 49; Issue: 25 Linguagem: Inglês
10.1016/j.electacta.2004.04.034
ISSN1873-3859
AutoresS. Shishiyanu, Oleg Lupan, T. Shishiyanu, V. P. Sontea, Serghei Railean,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
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