Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge
2000; Elsevier BV; Volume: 210; Issue: 4 Linguagem: Inglês
10.1016/s0022-0248(99)00759-9
ISSN1873-5002
AutoresJoosung Kim, Dongjin Byun, Jin-Sang Kim, Dong-Wha Kum,
Tópico(s)Semiconductor materials and devices
ResumoAbstract GaN films were deposited on sapphire(0 0 0 1) and Si(1 0 0) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully grown on α-Al 2 O 3 substrates even at relatively low temperatures ( 2 + ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.
Referência(s)