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Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

2012; American Institute of Physics; Volume: 100; Issue: 2 Linguagem: Inglês

10.1063/1.3675451

1520-8842

John E. Northrup, C.L. Chua, Zhilin Yang, Thomas Wunderer, Michael Kneissl, N. M. Johnson, Tim Kolbe,

Semiconductor Quantum Structures and Devices

For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases. This transition depends on various factors that include the strain in the quantum well. Experimental results are presented that illustrate the phenomenon for nitride light emitting diodes (LEDs) grown on sapphire and on bulk AlN. Model calculations are presented which quantify the dependence of the TE/TM switch on the quantum well strain and the Al composition in the barriers surrounding the well.