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Low subthreshold slope in junctionless multigate transistors

2010; American Institute of Physics; Volume: 96; Issue: 10 Linguagem: Inglês

10.1063/1.3358131

1520-8842

Chi‐Woo Lee, A. N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Rodrigo T. Doria, Jean-Pierre Colinge,

Integrated Circuits and Semiconductor Failure Analysis

The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope.