Modelling of MOSFETS at strong narrow pulses for VLSI applications
1987; Elsevier BV; Volume: 30; Issue: 5 Linguagem: Inglês
10.1016/0038-1101(87)90207-3
ISSN1879-2405
AutoresA. El-Hennawy, M.H. El Said, Jean-Pierre Borel, G. Kamarinos,
Tópico(s)Silicon and Solar Cell Technologies
ResumoHot carriers at the SiSiO2 interface of MOSFETs play an important role in the modelling and characterisation of MOSFET devices especially if the MOSFET is derived by a strong narrow pulse. Hot carrier generation is always associated with an increased interface-state density. This results in a greater surface recombination velocity. The carrier mobility which is sensitive to channel fields will also be decreased. These effects become increasingly important as the trend towards progressively smaller MOSFET geometries is increased. A simple 2-D model of the hot carrier motion inside the MOSFET channel is proposed. This model is used to evaluate the surface recombination velocity dependence on the MOSFET geometry and biasing voltages. The model is, therefore, used to modify the current equations for VLSI MOSFET at strong narrow pulses. The carrier lifetime τ is used as a fitting parameter. The simulation results are in good agreement with the experimental measurements for devices with gate length ranging from 1.4 to 3 μm with applied gate pulse of 200 ns duration. For devices with gate length 5 μm and greater, the traditional MOSFET current equations give the same results as that derived for strong narrow pulsed MOSFETs.
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