Generation of optical evanescent waves in vacuum‐deposited thin films of α‐oligothiophenes
1993; Volume: 5; Issue: 7-8 Linguagem: Inglês
10.1002/adma.19930050713
ISSN1521-4095
AutoresHarald Knobloch, Denis Fichou, Wolfgang Knoll, Hiroyuki Sasabe,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThe performance of oligothiophene‐based field‐effect transistors is thought to be dependent on the nature of the metal/semiconductor/insulator interfaces. The observation of evanescent optical waves in thin films of, for example, α‐6T (see Figure) provides a non‐destructive probe of the charge transfer processes taking place at these interfaces. magnified image
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