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Initial growth mechanism of atomic layer deposited TiN

2004; American Institute of Physics; Volume: 84; Issue: 22 Linguagem: Inglês

10.1063/1.1760217

1520-8842

A. Satta, A. Vantomme, Jörg Schuhmacher, Caroline M. Whelan, V. Sutcliffe, Karen Maex,

Copper Interconnects and Reliability

We have investigated the role of the substrate in the growth mechanism of TiN films grown by atomic layer deposition. The early stage of the film formation is dominated by a Volmer–Weber-type growth mode, driven by the ligand exchange of reactant molecules with preferential surface function groups. The density of function groups on the initial surface dictates the density and the vertical dimension of TiN islands, the evolution of the substrate coverage, and the minimum thickness at which the films become continuous.