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Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities

2008; American Institute of Physics; Volume: 93; Issue: 2 Linguagem: Inglês

10.1063/1.2958346

1520-8842

Michael Barth, Nils Nüsse, Johannes Stingl, Bernd Löchel, Oliver Benson,

Silicon Nanostructures and Photoluminescence

We report on the fabrication and optical characterization of photonic crystal (PC) double-heterostructure cavities made from silicon nitride (SiN). The intrinsic luminescence of the SiN membranes was used as an internal light source in the visible wavelength range (600–700nm) to study the quality factor and polarization properties of the cavity modes. Quality factors of up to 3400 were found experimentally, which represents the highest value reported so far in low-index PCs. These results highlight the role of SiN as a promising material system for PC devices in the visible.