Portal de Periódicos da CAPES

Nonlinear electrical properties of Si three-terminal junction devices

2010; American Institute of Physics; Volume: 97; Issue: 24 Linguagem: Inglês

10.1063/1.3526725

1520-8842

Fantao Meng, Jie Sun, Mariusz Graczyk, Kailiang Zhang, Mika Prunnila, Jouni Ahopelto, Peixiong Shi, Jinkui Chu, Ivan Maximov, H. Q. Xu,

Semiconductor materials and devices

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.