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A Printed and Flexible Field‐Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material

2008; Volume: 20; Issue: 18 Linguagem: Inglês

10.1002/adma.200800819

1521-4095

Jörg J. Schneider, Rudolf C. Hoffmann, Jörg Engstler, O. Soffke, Wolfram Jaegermann, Alexander Issanin, Andreas Klyszcz,

Gas Sensing Nanomaterials and Sensors

Advanced MaterialsVolume 20, Issue 18 p. 3383-3387 Communication A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material† Jörg J. Schneider, Corresponding Author Jörg J. Schneider joerg.schneider@ac.chemie.tu-darmstadt.de Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany)Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany).Search for more papers by this authorRudolf C. Hoffmann, Rudolf C. Hoffmann Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany)Search for more papers by this authorJörg Engstler, Jörg Engstler Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany)Search for more papers by this authorOliver Soffke, Oliver Soffke Department of Electrical Engineering and Information Technology, Microelectronic Systems Technische Universität Darmstadt Merckstr. 25, 64283 Darmstadt (Germany)Search for more papers by this authorWolfram Jaegermann, Wolfram Jaegermann Department of Materials and Geosciences, Surface Science Group, Technische Universität Darmstadt Petersenstr. 23, 64287 Darmstadt (Germany)Search for more papers by this authorAlexander Issanin, Alexander Issanin Department of Materials and Geosciences, Surface Science Group, Technische Universität Darmstadt Petersenstr. 23, 64287 Darmstadt (Germany)Search for more papers by this authorAndreas Klyszcz, Andreas Klyszcz Merck KGaA Frankfurter Str. 250, 64293 Darmstadt (Germany)Search for more papers by this author Jörg J. Schneider, Corresponding Author Jörg J. Schneider joerg.schneider@ac.chemie.tu-darmstadt.de Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany)Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany).Search for more papers by this authorRudolf C. Hoffmann, Rudolf C. Hoffmann Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany)Search for more papers by this authorJörg Engstler, Jörg Engstler Department of Chemistry, Inorganic and Mesoscopic Chemistry Group Technische Universität Darmstadt Petersenstr. 18, 64287 Darmstadt (Germany)Search for more papers by this authorOliver Soffke, Oliver Soffke Department of Electrical Engineering and Information Technology, Microelectronic Systems Technische Universität Darmstadt Merckstr. 25, 64283 Darmstadt (Germany)Search for more papers by this authorWolfram Jaegermann, Wolfram Jaegermann Department of Materials and Geosciences, Surface Science Group, Technische Universität Darmstadt Petersenstr. 23, 64287 Darmstadt (Germany)Search for more papers by this authorAlexander Issanin, Alexander Issanin Department of Materials and Geosciences, Surface Science Group, Technische Universität Darmstadt Petersenstr. 23, 64287 Darmstadt (Germany)Search for more papers by this authorAndreas Klyszcz, Andreas Klyszcz Merck KGaA Frankfurter Str. 250, 64293 Darmstadt (Germany)Search for more papers by this author First published: 05 September 2008 https://doi.org/10.1002/adma.200800819Citations: 129 † We cordially thank the Ernst-Ruska-Center for Microscopy and Spectroscopy with Electrons at Forschungszentrum Jülich (Dr. L. Houben, Dr. M. Luysberg) for making TEM measuring time possible. Additional financial support through the Karl und Marie Schack Stiftung, Frankfurt/Main is acknowledged with gratitude by J. J. S. Supporting Information is available online from Wiley InterScience or from the author. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract A family of single-source precursors for low temperature processing of uniform, transparent, and adherent ZnO thin films on various substrates is studied. They decompose cleanly under very mild processing conditions of 150 °C. The resulting ZnO thin films exhibit promising semiconducting properties when printed in a field-effect transistor (FET) device structure. This class of precursor compounds is compatible with existing printing technologies and allows printing of semiconductors on flexible polymer substrates under mild conditions. Citing Literature Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_adma200800819_sm_miscellaneous_information.pdf324 KB miscellaneous information Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume20, Issue18September 17, 2008Pages 3383-3387 RelatedInformation