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Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth

2012; Institute of Physics; Volume: 51; Issue: 9R Linguagem: Inglês

10.1143/jjap.51.090107

1347-4065

Norio Tokuda, Toshiharu Makino, Takao Inokuma, Satoshi Yamasaki,

Semiconductor materials and devices

We present a technique for the array formation of atomically step-free diamond surfaces on diamond (111) substrates by microwave plasma-enhanced chemical vapor deposition. With an appropriate choice of plasma conditions, the atomic steps initially present on each mesa surface move by lateral growth, and then, atomically step-free surfaces are successfully formed on diamond (111) mesas by microwave plasma-enhanced chemical vapor deposition. The lateral growth of diamond (111) films results in the formation of step-free surfaces with device dimensions up to 100 µm square on diamond (111) mesas. A limiting factor in scaling up the size and yield of the step-free mesas is the density of screw dislocations in the diamond substrate.