Portal de Periódicos da CAPES

Effect of In-doping on the Optical Constants of ZnO Thin Films

2012; Elsevier BV; Volume: 32; Linguagem: Inglês

10.1016/j.phpro.2012.03.614

1875-3892

Guancai Xie, L. Fanga, Liping Peng, G.B. Liu, Haibo Ruan, Fang Wu, Chunyang Kong,

Thin-Film Transistor Technologies

Highly transparent and conductive Indium-doped ZnO (ZnO:In) thin films with different In content were deposited on quartz glass slides by RF magnetron sputtering at room temperature. The thickness and the optical constants of the films were obtained by the Swanepoel method, and the effects of In concentration on the optical constants were investigated. Calculated results show that both the refractive index and optical band gap first increase then decreases with In concentration increasing in the visible region, and the variation of both ɛr and ɛi with wavelength follows the same trend as that of refractive index and extinction coefficient, respectively.