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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2011; Nature Portfolio; Volume: 10; Issue: 8 Linguagem: Inglês

10.1038/nmat3070

1476-4660

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, Ji Hyun Hur, Young‐Bae Kim, Changjung Kim, David H. Seo, Sunae Seo, U‐In Chung, In-Kyeong Yoo, Kinam Kim,

Semiconductor materials and devices