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ZnO-based light-emitting metal-insulator-semiconductor diodes

2007; American Institute of Physics; Volume: 91; Issue: 12 Linguagem: Inglês

10.1063/1.2786603

1520-8842

Dae‐Kue Hwang, Min‐Suk Oh, Jae‐Hong Lim, Yong‐Seok Choi, Seong-Ju Park,

GaN-based semiconductor devices and materials

The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9V and a band-edge emission at 380nm at room temperature. The electroluminescence emission of ZnO MIS was attributed to the generation of holes in the insulating ZnO layer at the high threshold voltage of 8.9V via an impact ionization process.