Characterization of defect-related optical absorption in ZnGeP2
1999; American Institute of Physics; Volume: 86; Issue: 12 Linguagem: Inglês
10.1063/1.371743
ISSN1520-8850
AutoresScott D. Setzler, Peter G. Schunemann, T. M. Pollak, M. C. Ohmer, Jonathan T. Goldstein, F. Kenneth Hopkins, K. T. Stevens, L. E. Halliburton, N. C. Giles,
Tópico(s)ZnO doping and properties
ResumoA broad optical absorption band with a peak near 1 μm is present in most single crystals of ZnGeP2. These same crystals have an electron paramagnetic resonance (EPR) signal which has been assigned to singly ionized zinc vacancies. A direct correlation between the intensity of the optical absorption at 1 μm and the intensity of the EPR signal has been established using a set of ZnGeP2 crystals where this absorption varied widely. These results suggest that the singly ionized zinc vacancy acceptor plays a direct role in the electronic transition(s) responsible for the 1 μm optical absorption. In separate experiments, it was found that illuminating the ZnGeP2 crystals with a He–Ne laser (632.8 nm) while at temperatures near 25 K produces an increase in the absorption at 1 μm and an increase in the zinc vacancy EPR spectrum. These latter results provide further evidence that the absorption at 1 μm is associated with the singly ionized zinc vacancy acceptor.
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