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The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

2010; Institute of Physics; Volume: 157; Issue: 11 Linguagem: Inglês

10.1149/1.3483787

1945-7111

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung, Se Yeob Park, Yeon-Gon Mo, Jong Han Jeong, Jang‐Yeon Kwon, Myung-Kwan Ryu, Sangyoon Lee, Rino Choi, Jae Kyeong Jeong,

Silicon and Solar Cell Technologies

The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with GI. This superior stability of the -gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer–Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation.