Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane
1994; Elsevier BV; Volume: 135; Issue: 1-2 Linguagem: Inglês
10.1016/0022-0248(94)90726-9
ISSN1873-5002
AutoresJun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara,
Tópico(s)Advanced ceramic materials synthesis
ResumoSiC single crystalline ingots have been grown on faces perpendicular to the SiC (0001) basal plane by a sublimation method. It is shown that a polytypic structure of the grown crystal succeeds perfectly to that of the seed. Hexagonal etch pits are not observed, which are always detected on crystals grown on {0001} faces. Moreover, this growth eliminates defects penetrating a crystal in the form of empty tubes. We discuss how the relation between dislocations and growth mechanism of SiC is influenced by the seed orientation.
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