Portal de Periódicos da CAPES

Band offsets in HgTe/CdTe and HgSe/CdSe heterostructures from electron mobility limited by alloy scattering

1988; American Physical Society; Volume: 38; Issue: 15 Linguagem: Inglês

10.1103/physrevb.38.10941

1095-3795

T. Dietl, J. Kossut,

Semiconductor Quantum Structures and Devices

It is pointed out that previous low-temperature measurements of mobility and the Nernst-Ettingshausen effect in n-type ${\mathrm{Hg}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Cd}}_{\mathrm{x}}$Te and n-type ${\mathrm{Hg}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Cd}}_{\mathrm{x}}$Se provide independent information on the band offsets in HgTe/CdTe and HgSe/CdSe heterostructures. The values of the band offsets obtained using this method agree with those from the photoemission data as well as with those deduced from the position of the Fe donor level in ${\mathrm{HgSe}}_{\mathrm{y}}$${\mathrm{Te}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$:Fe.