High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers
2008; American Institute of Physics; Volume: 93; Issue: 9 Linguagem: Inglês
10.1063/1.2965113
ISSN1520-8842
AutoresSung‐Nam Lee, J. K. Son, H. S. Paek, Youngje Sung, K. S. Kim, H. K. Kim, Hyonchol Kim, T. Sakong, Y. Park, K. H. Ha, Okhyun Nam,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoInGaN optical confinement layers (OCLs) were introduced into blue-violet AlInGaN-based laser diodes (LDs), resulting in the drastic improvements of lasing performance. Comparing with conventional LD structure, the lowest threshold current density of 2.3kA∕cm2 has been achieved by adding 100-nm-thick InGaN OCLs which represented maximum optical confinement factor. Additionally, we observed the high quantum efficiency and the uniform emission intensity distribution of InGaN quantum wells grown on lower InGaN OCL than on typical GaN layer. Upper InGaN OCL can reduce Mg diffusion from p-type layers to InGaN active region by separating the distance between InGaN quantum wells and p-type layers.
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