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Growth Conditions and Some Properties of TmB 4 and TmAlB 4 Single Crystals Obtained from High-Temperature Aluminium Metal Solution

1994; Institute of Physics; Volume: 33; Issue: 5R Linguagem: Inglês

10.1143/jjap.33.2663

1347-4065

Shigeru Okada, Kunio Kudou, Yang Yu, Torsten Lundström,

Boron and Carbon Nanomaterials Research

TmB 4 and TmAlB 4 single crystals were obtained by the high-temperature aluminium solution method using thulium oxide powder and crystalline boron powder as starting materials. The optimum conditions to obtained relatively large crystals mentioned above were found to include soaking temperature 1500°C, soaking time 10 h, cooling rate 50°C·h -1 and the atomic ratios of starting materials: B/Tm=5.5, Al/Tm=119.25 for TmB 4 ; B/Tm=2.0, Al/Tm=119.25 for TmAlB 4 . In the case of TmB 4 , polyhedra single crystals were obtained. The ternary single crystals TmAlB 4 were generally obtained in the form of prismatic shape extending in the <001> direction or with well developed (100) faces. The as-grown TmB 4 and TmAlB 4 single crystals were used for chemical analysis and measurements of unit cell dimensions. Densities, microhardness and electrical resistivity of the as-grown crystals was studied.