R.F. plasma deposition of silicon nitride layers
1978; Elsevier BV; Volume: 55; Issue: 1 Linguagem: Inglês
10.1016/0040-6090(78)90082-2
ISSN1879-2731
AutoresM.J. Helix, K. V. Vaidyanathan, B. G. Streetman, H.B. Dietrich, P.K. Chatterjee,
Tópico(s)GaN-based semiconductor devices and materials
ResumoA versatile r.f. plasma deposition system used to deposit high quality Si3N4 films at low temperature (200–350°C) is described. By introducing the reactant gases separately and reactively reducing the oxygen content of the system, films which exhibited very little oxygen contamination could be deposited. Rutherford backscaterring studies were used to evaluate the atomic composition of the films. The composition was related to other parameters such as the index of refraction, the etch rate and the deposition rate. The nitride layers described here were used successfully to anneal ion-implanted GaAs with negligible surface degradation.
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