Characterization of responses and comparison of calibration factor for commercial MOSFET detectors
2005; Elsevier BV; Volume: 30; Issue: 4 Linguagem: Inglês
10.1016/j.meddos.2005.08.004
ISSN0958-3947
AutoresGanesan Bharanidharan, D Manigandan, Devan Krishnamurthy, Vellaiyan Subramani, Gopishankar Natanasabapathi, Tharmar Ganesh, Rakeshchander Joshi, Gourakishore Rath, Velmurugan Jagadeesan, Prakasarao Aruna, Singaravelu Ganesan,
Tópico(s)Radiation Detection and Scintillator Technologies
ResumoA commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOSFET clearly shows that it is highly reproducible, independent of field size and dose rate. Furthermore, MOSFET has a very high degree of linearity, with r-value > 0.9 for all 3 energies. The calibration factor for 2 similar MOSFET detectors of model TN502-RD were also estimated and compared for all 3 energies. The calibration factor between the 2 similar MOSFET detectors shows a variation of about 1.8% for 60Co and 15 MV, and for 6 MV it shows variation of about 2.5%, indicating that calibration should be done whenever a new MOSFET is used. However, the detector shows considerable angular dependency of about 8.8% variation. This may be due to the variation in radiation sensitivity between flat and bubble sides of the MOSFET, and indicates that positional care must be taken while using MOSFET for stereotactic radiosurgery and stereotactic radiotherapy dosimetric applications.
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