Nanometer-resolved spatial variations in the Schottky barrier height of a Au/ n -type GaAs diode
1994; American Physical Society; Volume: 49; Issue: 23 Linguagem: Inglês
10.1103/physrevb.49.16474
ISSN1095-3795
AutoresA. Alec Talin, R. Stanley Williams, B. A. Morgan, Ken M. Ring, K. L. Kavanagh,
Tópico(s)Force Microscopy Techniques and Applications
ResumoNanometer-resolved lateral variations in the Schottky barrier height (SBH) formed at a chemically prepared Au/n-type GaAs interface were measured using ballistic-electron-emission microscopy (BEEM). The spatial profile and the statistical distribution of the SBH's thus obtained were compared to current-voltage (IV) and capacitance-voltage (CV) characteristics of the same metal-semiconductor contact. This comparison showed that the macroscopic SBH obtained from the IV measurements can be successfully interpreted using the parallel conduction model applied to the BEEM-derived distribution, if the effect of thermionic field emission is included. The SBH obtained from the CV measurements is greater than the mean value obtained from BEEM measurements by nearly the image-force lowering expected for a Au/GaAs diode.
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