Effects of crystallinity and point defects on optoelectronic applications of β-Ga_2O_3 epilayers
2013; Optica Publishing Group; Volume: 21; Issue: 21 Linguagem: Inglês
10.1364/oe.21.024599
ISSN1094-4087
AutoresParvaneh Ravadgar, Ray Hua Horng, Shu-De Yao, Hsin-Ying Lee, Bing-Rui Wu, Sin Liang Ou, Li-Wei Tu,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoThis study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of β-Ga₂O₃ epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on β-Ga₂O₃ epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects.
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