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Thermal and doping dependence of 4H-SiC polytype transformation

2002; American Institute of Physics; Volume: 81; Issue: 15 Linguagem: Inglês

10.1063/1.1512816

1520-8842

L. J. Brillson, S. Tumakha, Gregg H. Jessen, Robert S. Okojie, M. Zhang, P. Pirouz,

HVDC Systems and Fault Protection

We have observed characteristic temperatures, anneal times, and doping densities that lead to stacking faults and 3C-SiC-like bands in 4H-SiC epilayers. Low energy cathodoluminescence spectroscopy measurements reveal a temperature threshold of 800 °C for emergence of these features in thermally oxidized or argon annealed 4H-SiC with an activation energy ≈2.5 eV. Stacking fault generation and polytype transformation exhibits a strong doping dependence, appearing only in a range of highly doped n-type 4H-SiC. Systematics of these strain and/or electronic effects induced by high N concentrations can be used to control structural instabilities during SiC device fabrication.