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Raman study of Mg, Si, O, and N implanted GaN

2003; American Institute of Physics; Volume: 94; Issue: 7 Linguagem: Inglês

10.1063/1.1606521

1520-8850

M. Katsikini, Konstantinos Papagelis, E. C. Paloura, S. Ves,

Metal and Thin Film Mechanics

The effect of Mg, Si, N, and O ion implantation (with doses in the range 5×1013–1×1018 cm−2), in epitaxially grown GaN samples has been studied using Raman spectroscopy. It is found that implantation increases the static disorder and activates modes that were not allowed in the as-grown material. More specifically it causes the appearance of three additional Raman peaks at 300, 420, and 670 cm−1. It is found that the position of these peaks does not depend on the type of the implant and thus they do not correspond to local vibrational modes. They are attributed to disorder activated Raman scattering (300 cm−1) and/or to implantation induced N and Ga vacancies or interstitials (420 and 670 cm−1). Finally, ion implantation causes a marginal increase of the build-in hydrostatic stress.