Density of amorphous Si
1994; American Institute of Physics; Volume: 64; Issue: 4 Linguagem: Inglês
10.1063/1.111121
ISSN1520-8842
AutoresJ. S. Custer, Michael O. Thompson, D. C. Jacobson, J. M. Poate, S. Roorda, W.C. Sinke, F. Spaepen,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe density of amorphous Si has been measured. Multiple Si implants, at energies up to 8.0 MeV, were made through a contact mask to produce alternating amorphous/crystalline Si stripes with amorphous thicknesses up to ∼5.0 μm. For layers up to 3.4 μm (5 MeV), the amorphous Si is constrained laterally and deforms plastically. Above 5 MeV, plastic deformation of the surrounding crystal matrix is observed. Height differences between the amorphous and crystalline regions were measured for as-implanted, thermally relaxed, and partially recrystallized samples using a surface profilometer. Combined with ion channeling measurements of the layer thickness, amorphous Si was determined to be 1.8±0.1% less dense than crystalline Si (4.90×1022 atom/cm3 at 300 K). Both relaxed and unrelaxed amorphous Si show identical densities within experimental error (<0.1% density difference).
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