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Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

1991; Elsevier BV; Volume: 310; Issue: 3 Linguagem: Inglês

10.1016/0168-9002(91)91115-c

1872-9576

I. Hietanen, J. Lindgren, Risto Orava, T. Tuuva, Martti Voutilainen, Richard Brenner, Mikael Andersson, Kari Leinonen, Hannu Ronkainen,

Silicon Nanostructures and Photoluminescence

Abstract Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser.