Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films
2004; Elsevier BV; Volume: 13; Issue: 4-8 Linguagem: Inglês
10.1016/j.diamond.2004.01.031
ISSN1879-0062
AutoresTokuyuki Teraji, S Yoshizaki, Hideki Wada, Mitsuhiro Hamada, Toshimichi Ito,
Tópico(s)Thin-Film Transistor Technologies
ResumoWe have characterized the diamond-based photodetectors (DBPs) fabricated using high-quality single crystalline diamond film. The diamond film was homoepitaxially grown at high growth rate of ∼2 μm/h by high-power microwave plasma chemical vapor deposition (CVD). The grown film had a substantially flat surface without non-epitaxial crystallites and gave strong free-exciton recombination emission from almost whole homoepitaxial region. Planar-type DBPs with interdigitated electrodes were fabricated using the diamond film with 20-μm thickness by standard photolithograph techniques. The DBP with 43-μm electrode spacing revealed small noise equivalent power (NEP), <1 pW, for 220-nm ultraviolet (UV) light. The NEP was four orders smaller than that for UV-sensitive Si photodetector (SP), that means high performance to faint UV light detection. Photo responsivity of the DBP for 400-nm visible light was at least four orders smaller than that for 220-nm UV light. The low NEP for UV light and high spectral selectivity of the present DBPs reflects high crystalline quality of the diamond film.
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